Samsung 970 EVO Plus 250GB PCIe 3.0 M.2 NVMe SSD

SKU: MZ-V7S250BW Categories: , ,


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SKU: MZ-V7S250BW Categories: , ,


Always Evolving SSD

The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing. In capacities up to 2TB, with reliability of up to 1,200 TBW.

Level up Performance

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boosts

Design Flexibility

The next advancement in NVMe SSD. The 970 EVO Plus fits up to 2TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung†s innovative technology empowers you with the capacity to do more and accomplish more.

Exceptional Endurance

The new standard in sustainable performance. Get up to 1,200 TBW with a 5-year limited warranty for lasting performance. The 970 EVO Plus provides exceptional endurance powered by the latest V-NAND technology and Samsung’s quality.

Unparalleled Reliability

Achieve a new level of drive confidence. Samsung’s advanced nickel-coated controller and heat spreader on the 970 EVO Plus enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops.

Samsung Magician

Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health and speed, and even boost performance.

Additional information


PCIe® Gen 3.0 x4, NVMe™ 1.3

Formatted Capacity

Form Factor

M.2 (2280)


Sequential Read – 3500 MB/s
Sequential Write – 2300 MB/s
Random Read (4KB, QD32): 2,50,000 IOPS
Random Write (4KB, QD32): 5,50,000 IOPS
Random Read (4KB, QD1): 17,000 IOPS
Random Write (4KB, QD1): 60,000 IOPS

Endurance (TBW)



Samsung V-NAND 3bit MLC

Cache Memory

Samsung 512MB Low Power DDR4 SDRAM

Encryption Support

AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)

S.M.A.R.T. Support



Samsung Phoenix Controller


5 Years


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